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Researchers at the Raman Research Institute (RRI) have made a significant breakthrough in understanding the transport properties of ultra-cold atoms in a quantum system. The study focused on the behavior of potassium atoms exposed to light pulses, which could lead to the development of smart, high-conductivity materials and enhance the design of next-generation batteries. At extremely low temperatures, atoms exhibit unique properties, such as quantum tunneling and quantized conductance, which play a crucial role in technologies like flash memory and nanoscale electronic devices. The RRI team, supported by the Department of Science and Technology, studied the quantum transport properties of neutral potassium atoms at ultra-low temperatures using 3D trapping beams. The results showed that the atoms, initially expected to behave like a pendulum, exhibited unexpected changes, shifting from overdamped to underdamped oscillations due to interactions between the atoms and photons. These findings could lead to the design of smart materials with tailored properties, offering high conductivity and customizability, and may revolutionize energy storage solutions and contribute to the development of cutting-edge technologies.

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